doi:10.3850/978-981-07-0319-6_239

ABSTRACT

In this paper bottom gate bottom contact organic thin film transistors utilizing R2R-processes for gate manufacturing, application of dielectric, application of imprint resist, and hot-embossing of source-drain patterns are demonstrated. Also the other process steps involved in the manufacturing process i.e. dry etching, evaporation of source-drain electrodes, lift-off, and evaporation of semiconductor can be made in a roll-to-roll fashion, thus making the manufacturing route roll-to-roll compatible. The work presented in this paper demonstrates that roll-to-roll NIL is applicable to create source-drain structures with channel lengths much smaller than achieved by other traditional R2R-printing techniques.

Keywords: Organic transistor, Roll-to-roll, Printing, Hot-embossing, NIL.

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