ABSTRACT
Organic electronics is a field that generates a very high interest both in the research community as well as industrially. To fully take use of its potential, the different features should be minimized. A typical organic transistor consists of source, drain, gate, dielectric and semiconductor. In particular, the channel length (length from source to drain) should be as small as possible. Therefore the width of the gate finger is a very important part, as well as the distance between drain and source. Another contributing factor is the thickness of the dielectric layer.
The most suitable technology to produce these features is nanoimprint lithography. However, due to the fact that the transistors many times require patterns that combine micro and nano features, the nanoimprint lithography process must be highly flexible. Using the IPS®/STU® process from Obducat, we have shown that it is possible to produce bottom gate features in Au on flexible polymer substrates. The process is capable of producing patterns down to 23 nm in width. The process is highly tuneable, which means that the final pattern dimensions can be adjusted by adjusting the process. The process can produce both micro-and nano-patterns and any combination thereof on both flexible as well as standard substrates.
Keywords: Nanoimprint lithography, Bottom gate, UV NIL, High volume nanoimprint, Flexible substrate.
