doi:10.3850/978-981-07-0319-6_195

ABSTRACT

Physico-chemical and spectroscopic study of AlN powder synthesized by a direct nitridation route of aluminium-metal powder in flowing N₂ and NH₃ gases at high temperature using additives has been carried out. The AlN powder is characterized as a suitable high-tech material for application like as ceramic dielectric substrates in microelectronics. Conventional physico-chemical methods (chemical gaseous analysis, XRD analysis, transmission electron microscopy (TEM), and BET method) and spectroscopic methods (infrared spectroscopy – FT-IR, and X-ray photoelectron spectroscopy–XPS) have been used to carry out the investigations of the AlN powder. The oxygen, hydrogen, and nitrogen content, the size and the shape of the AlN particles, their surface state, and their specific surface area have been determined. The surface atomic concentrations and binding energy of the elements to the nucleus have been also measured. X-ray diffraction analysis is carried out to determine the phases in AlN. The AlN powder grains (as prepared) are micronized in size. The oxygen content in AlN powder, respectively Al₂O₃ on the surface is low, which guarantees a good thermal conductivity of the sintered in dense form dielectric substrates.

Keywords: AlN powder, Dielectric substrates, High-tech material for IC techniques, BET method, Specific surface area, FT-IR spectroscopy, FT-IR spectra, XPS, Binding energy, XRD analysis, TEM micrographs.

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