doi:10.3850/978-981-08-7615-9_BS03


Novel pH Sensor based on Vertical Silicon Nanowire Electrilyte-Insulator-Semiconductor Structure


Yi-Ting Lin1, Yu-Hong Yu2, Tzu-Chien Chang1, Yu Chen2, Guo-Jun Zhang3, Shi-Yang Zhu3 and Chao-Sung Lai1,4

1Department of Electronic Engineering, Chang Gung University, Kweishan 333, Taoyuan, Taiwan

2School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore

3Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), 11 Science Park Road, Singapore Science Park II, Singapore 117685, Subgaoire

4Biosensor Group, Biomedical Engineering Research Center, Chang Gung University, Kweishan 333, Taoyuan, Taiwan

ABSTRACT

The vertical silicon nanowire (SiNW) platforms are candidates for use in ultrasensitive biosensor, that surface to volume ratio higher than one dimensional silicon nanowire. In this paper, a novel vertical silicon nanowire electrolyte-insulator-semiconductor (EIS) structure with an ALD-HfO2 sensing membrane is proposed for the first time for use in a hydrogen ion sensor. Hafnium dioxide is used as the sensing membrane, which deposited on the surface of the vertical SiNW structure by atomic layer deposition. The sensing properties were examined using an HP4284A LCR analyzer. A linear relationship was found between the flatband voltage shift and the hydrogen ion concentration. A postdeposition rapid thermal annealing (RTA) was utilized to optimize the sensing properties, and the sensitivity was increased to 51.7 mV/pH.


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