doi:10.3850/978-981-08-7615-9_BS02


The Super Nernst Phenomena of Hydrogen Ion Sensor with HfO2/Si3N4/SiO2 Multiple Sensing Membranes


Jer-Chyi Wang1,2, Tseng-Fu Lu1, Chieh-Yuan Liu1, Chia-Ming Yang3 and Chao-Sung Lai1,2

1Department of Electronic Engineering, Cgang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, Taiwan, 333, R.O.C

2Biosensor Group, Biomedical Engineering Center, Chang Gung University, 259 Wen-Hwa 1st Road, Kwei-Shan 333, Tao-Yuan, Taiwan.

3Inotera Memories, Inc., 667, Fu-Hsing 3rd Rd, Hwa-Ya Technology Park, Kwei-Shan, Tao-Yuan, 333, R.O.C.

ABSTRACT

This work a systematic investigates the behavior and mechanism of pH-sensing using an electrolyte-insulator-semiconductor (EIS) structure with multiple sputtered-HfO2/Si3N4/SiO2 sensing membranes. Capacitance-voltage (C-V) measurements were used to characterize the sensing properties. A pH-response over the Nernstian limit of the proposed device is achieved after programming. An increase of pHsensitivity with programming voltage and time is observed. Moreover, the pH-response is stable after 100 program/erase (P/E) cycles and the drift rate after programming is satisfactory. The high pH-sensitivity of this multiple sensing membrane EIS structure suggests the possibility of detecting small pH variations in bio-sensor applications.


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