Pressure Drop and Deposition Rate in Chemical Vapor Deposition — A Theoretical Study on Effect of System Parameters

ABSTRACT

Chemical vapor deposition (CVD) is a process used to obtain thin-film coating on electronic devices such as computer chips and other microelectronic parts. CVD is capable of producing film thickness of the order of a micro meter. Thick, dense, ductile, and good adhesive coatings can be obtained by the CVD process on metals and non-metals. In the present work a theoretical model is formulated for chemical vapor deposition of silicon from silane vapor on a metal or wafer substrate, which is placed on a succeptor plate. A mixture of silane and hydrogen passes over the hot succeptor, which is fitted on the bottom wall of the duct. Silicon is produced due to a chemical reaction between silane and hydrogen, and the same forms a thin coat over the substrate. Numerical results are obtained using FLUENT to study the pressure drop and deposition rate of silicon for chosen values of inlet pressure, temperature, silane concentration and gas velocity. The profiles for the variation of pressure, temperature and concentration of silane in the gas along the duct are presented for different inlet velocities and inlet mass fractions of silane. The coating thickness for the prescribed time duration is also presented for different inlet velocities and inlet concentrations of silane. The results indicate that the silicon film thickness is governed by the inlet parameters mentioned above.

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