Proceedings of the
9th International Conference of Nanomanufacturing (nanoMan2024)
December 1 – 4, 2024, Singapore

Enhancing Oxide Growth Rate in Rolling Nanoele ctrode Lithography (RNEL) Process

Rashed Md. Murad Hasan1,2, Zhengjian Wang1 Jian Gao1, Wenkun Xie1 and Xichun Luo1,a

1Centre for Precision Manufacturing, DMEM, University of Strathclyde, Glasgow G1 1XJ, UK.

2Department of Electrical and Electronic Engineering, Chittagong University of Engineering and Technology, Chittagong, Bangladesh

ABSTRACT

We demonstrated that surface manipulation of silicon substrate with ethyl alcohol can increase the oxide growth rate during the rolling nanoelectrode lithography (RNEL) process. Here, we performed the oxidation process with the modified silicon substrate which shows an enhanced oxidation growth rate by almost an order of magnitude that of in unmodified silicon substrate. The parametric effects on oxide growth were performed, where the rolling speed and the applied bias voltage were identified as the primary control parameters for oxide growth. Experimental studies show the linear dependence of the oxide height as a function of the applied voltage, whereas the oxide height is increased with decreasing the rolling speed. The present results show that the rolling nanoelectrode lithography can be a suitable large-area fabrication approach to fabricate nanostructures with high throughput.

Keywords: Nanolithography, Rolling speed, Bias voltage, Relative humidity.


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