doi: 10.3850/978-981-11-0749-8_706
Development of Highly Efficient Combined Polishing Method for Single-Crystal Silicon Carbide
Tsuneo Kurita, Koji Miyake, Kenji Kawata, Kiwamu Ashida and Tomohisa Kato
National Institute of Advanced Industrial Science and Technology (AIST)
Abstract
The aim of this research is to develop a combined polishing technology for Single-crystal SiC wafers, which is known to be difficult to process due to its high hardness. This paper proposes a combined polishing method based on converting SiC into a material with a relatively low hardness, and then polishing this material using abrasive particles with a higher hardness. The proposed polishing method uses either a photodissociation or an electrochemical technique to reduce the hardness of SiC. The effectiveness of the combined technique is experimentally demonstrated.
Keywords: Complex machining, Silicon carbide, UV irradiation, Electrochemical machining, Polishing.
